Quantum dot photonic devices in next generation Si photonic integrated circuits and displays

Si Photonics is a rapidly growing technology poised to address new functionality to enable applications ranging from large-bandwidth, ultra-energy efficient and cost-effective optical interconnects in data centers to micro-displays for virtual and augmented reality (VR/AR).

While in recent years the functionality of Si-photonics has exploded, the realization of direct material integration for III/V semiconductor-based devices on Si is still largely unfulfilled. This research project will develop new nano-structured III/V semiconductor materials, so-called “quantum dots (QDs)”, to realize high efficiency light-emitter devices, including lasers and light emitting diodes (LEDs) directly fabricated on low-cost Si. The novelty stems from 1) a highly controllable QD formation process, which is applicable to a wide range of semiconductor materials, and hence a large range of emission wavelengths, and 2) The inherent ability of such QD materials to be highly resilient to the large number of material defects often present in III/V materials grown directly on Si.

The proposed technology is considered extremely important for the global technology advancement with emphasis on extending U.S. technology leadership in semiconductors, beyond Si. Realizing high-quality III/V material and semiconductor devices on large-scale silicon is an outstanding technical challenge for decades. Breakthrough material advancements are critically needed to realize photonic integrated circuits and integrated micro-display technology for emerging virtual reality applications.

PRINCIPAL INVESTIGATOR

Luke Mawst, professor of electrical and chemical engineering

CO-PRINCIPAL INVESTIGATORS

Padma Gopalan, professor of materials science

Chirag Gupta, assistant professor of electrical and computer engineering

Shubhra Pasayat, assistant professor of electrical and computer engineering